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| Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1587 DESCRIPTION With TO-3PML package Complement to type 2SD2438 APPLICATIONS Audio, Series Regulator and General Purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage HAN INC Emitter-base voltage Collector current Base current Junction temperature Storage temperature SEM GE Open base Open emitter OND IC CONDITIONS TOR UC VALUE -160 -150 -5 -8 -1 UNIT V V V A A W ae ae Open collector Collector power dissipation TC=25ae 75 150 -55~150 1 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-30mA; IB=0 IC=-6 A;IB=-6m A IC=-6 A;IB=-6m A VCB=-160V; IE=0 VEB=-5V; IC=0 IC=-6A ; VCE=-4V IC=-1A ; VCE=-12V IE=0; VCB=-10V;f=1MHz 5000 65 MIN -150 2SB1587 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V -2.5 -3.0 -100 -100 |I |I V V A A MHz pF Switching times ton ts tf Fall time ANG Y 15000-30000 Turn-on time Storage time INCH P SEM E IC=-6A;RL=10| IB1=-IB2=-6mA VCC=-60V OND IC TOR UC 160 0.7 3.6 0.9 |I |I |I s s s hFE classifications O 5000-12000 6500-20000 2 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE 2SB1587 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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